[13p-1D-1~26] 15.4 III-V-group nitride crystals

[13p-1D-24] Observation of dislocations in GaN layer deposited on 4-inch Si(111) with AlGaN/AlN strained layer superlattice

Yoshihiro Sugawara¹, 〇Yukari Ishikawa¹, Arata Watanabe², Makoto Miyoshi², Takashi Egawa² (1.JFCC, 2.Nagoya Inst. Tech.)

Keywords:GaN,dislocation,TEM

We characterized dislocations in 1um GaN layer that deposited on 4-inch Si(111) with AlGaN/AlN strained layer superlattice (SLS) using a horizontal metal–organic chemical vapor deposition system by transmission electron microscopy and scanning transmission electron microscopy. The dislocation density at the top of GaN layer was 1/3~1/4 of that at the interface of GaN/SLS. Both of dislocation reaction and annihilation that decrease dislocation density were detected by plan view observation.