The 76th JSAP Autumn Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)

3:00 PM - 3:15 PM

△ [13p-1D-8] Characterization of Defect Distribution in Semipolar (20-21) GaN Thick Films by X-ray Microdiffraction

〇toshiro uchiyama1, Shotaro Takeuchi1, Takuji Arauchi1, Yasuhiro Hashimoto2, Keisuke Yamane3, Narihito Okada2, Yasuhiko Imai4, Shigeru Kimura4, Kazuyuki Tadatomo2, Akira Sakai1 (1.Osaka Univ., 2.Yamaguchi Univ., 3.Toyohashi Univ. of Tech., 4.JASRI/SPring-8)

Keywords:semipolar,X-ray microdiffraction,gallium nitride