2015年 第76回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

15 結晶工学 » 15.4 III-V族窒化物結晶

[13p-1D-1~26] 15.4 III-V族窒化物結晶

2015年9月13日(日) 13:15 〜 20:15 1D (141+142)

座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)

15:15 〜 15:30

[13p-1D-9] Evaluation of dislocations in HVPE GaN single crystal by KOH etching with Na2O2 additive and cathodoluminescence mapping

〇Yongzhao Yao1, Yukari Ishikawa1,2, Yoshihiro Sugawara1, Daisaku Yokoe1, Masaki Sudo2, Narihito Okada3, Kazuyuki Tadatomo3 (1.JFCC, 2.Nagoya Inst. of Tech, 3.Yamaguchi Univ.)

キーワード:GaN,etch pit method,dislocation

Threading dislocations (TDs) are believed to be one of the major causes of low carrier mobility, large leak current and premature breakdown in GaN power devices. TDs in GaN single crystal can generally be categorized into edge (ED, Burgers vector b=a), screw (SD, b=nc) and mixed (MD, b=nc+ma) types, and they degrade device performance differently. Therefore, revealing TDs and identifying their types are crucial to crystal growth control and failure analysis of GaN devices. In this study, we report a novel chemical etching technique using molten KOH with Na2O2 additive (referred to as “KN etching” henceforth), by which characteristic etch pits can be formed to identify TDs. The results are then compared with cathodoluminescence (CL) mapping.