1:30 PM - 1:45 PM
[13p-1E-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(10) Irradiation induced complexes in N doped silicon
Keywords:silicon single crystal,infrared absorption,nitrogen - intrinsic point defect complex
Irradiation induced complexes in N doped silicon was examined by high sensitivity infrared absorption spectroscopy. In FZ silicon, N2 absorption reduced and new lines appeared and changed by the annealing. VN2 and VN2 were the candidates of origin of new absorption. N2 absorption did not reduced in CZ silicon.