[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-9] Enhanced Diffusion of Boron by Oxygen Precipitation in Silicon Crystals

〇Kazuhisa Torigoe¹, Toshiaki Ono¹ (1.SUMCO Corp.)

Keywords:silicon,boron,diffusion

Boron in silicon crystals diffuses through an interstitial mechanism. It is well known that a boron diffusion is enhanced by interstitials which surface oxidation injects at annealing of silicon wafers in an O₂ ambient. In this work, we have found that oxygen precipitations in silicon crystals enhanced the boron diffusion. We analyze the enhancement based on the emission of interstitials by oxide precipitations and the absorption of interstitials by punch-out dislocations.