The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

8 Plasma Electronics » 8.0 Plasma Electronics English Session

[13p-1F-3~18] 8.0 Plasma Electronics English Session

Sun. Sep 13, 2015 2:30 PM - 6:45 PM 1F (Reception Hall 1)

Chair:Fumiyoshi Tochikubo(Tokyo Metropolitan Univ.),Hiroshi Akatsuka(Titech)

5:00 PM - 5:15 PM

[13p-1F-12] Copper Induced Hollow Carbon Nanospheres by Arc Discharge: Synthesis and Mechanism

〇Hu Rui1,2, Xiangke Wang2, Masaaki Nagatsu1 (1.Shizuoka Univ., 2.CAS)

Keywords:arc discharge,hollow carbon nanosphere

Metal-induced nanomaterials encapsulated with graphitic carbon layer are one of the most extensively researched materials in the past twenty years, and have attracted considerable interest due to their strong potentials for catalysis, delivery system, nano-level storage, optical and electronic devices. Therefore, the development of new carbon materials with novel morphologies and structures is still of significant importance in the material sciences. Recently, much work have been done on the fabrication of copper-carbon nanomaterials. In this report, we synthesized copper initiated hollow carbon nanospheres by a direct current arc discharge method.