[13p-2H-1~21] 6.3 Oxide electronics

△ [13p-2H-11] The improvement of electron mobility in La:BaSnO₃ thin films by the insertion of atomically-flat insulating (Sr,Ba)SnO₃ buffer layer

〇(M2)KAZUKI NISHIHARA¹, JUNICHI SHIOGAI¹, ATSUSHI TSUKAZAKI^1,2 (1.IMR, Tohoku Univ., 2.PRESTO, JST)

Keywords:transparent conducting thin film,mobility

Recently, BaSnO₃ have attracted much attention as the high mobility transparent conducting material. However, it is a problem that electron mobility of BaSnO₃ thin films on SrTiO₃ substrate is lower than that of single crystals due to the large lattice mismatch (5.5%) with SrTiO₃ substrate. In this study, electron mobility in La:BaSnO₃ thin films was improved by the insertion of atomically-flat BaSnO₃ / (Sr,Ba)SnO₃ buffer layer.