The 76th JSAP Autumn Meeting, 2015

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6 Thin Films and Surfaces » 6.3 Oxide electronics

[13p-2H-1~21] 6.3 Oxide electronics

Sun. Sep 13, 2015 1:45 PM - 7:15 PM 2H (222)

座長:矢嶋 赳彬(東大),藤原 宏平(東北大)

2:45 PM - 3:00 PM

△ [13p-2H-5] Resistive switching characteristics in TiO2-based ReRAM cells with Pt or Ag top electrode

〇Yutaka Kuriyama1, Yusuke Nishi1, Tsunenobu Kimoto1 (1.Kyoto Univ.)

Keywords:resistive switching memory,TiO2,filament