[13p-2H-1~21] 6.3 Oxide electronics

△ [13p-2H-7] Dependence of the resistive switching properties on the growth temperature in high density epitaxial Fe₃O_4-δ nanodots.

〇Yoshiki Maeda¹, Kentaro Watanabe¹, Yuta Nakamoto¹, Hideki Matsui¹, Shotaro Takeuchi¹, Akira Sakai¹, Yoshiaki Nakamura¹ (1.Osaka Univ.)

Keywords:nanodots,iron oxide