The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[13p-2Q-1~27] 6.4 Thin films and New materials

Sun. Sep 13, 2015 1:15 PM - 8:30 PM 2Q (231-1)

座長:西川 博昭(近畿大),田中 勝久(京大),名村 今日子(京大),篠田 健太郎(産総研)

5:15 PM - 5:30 PM

[13p-2Q-15] Effect of pre-deposition process of Ag auto-doping layer on Mg2Sn thin film

〇tatsuki yokoyama1, mikihiko nishitani1,2, yukihiro morita1,2, tetsusei kurashiki1 (1.Osaka Univ., 2.Panasonic Corporation.)

Keywords:thin film,Mg2Sn,Ag

Currently, Bi2Te3 and PbTe as a thermoelectric material have high thermoelectric properties, there are problems with abundance and toxicity. Then, Mg2Sn can be expected to have highest thermoelectric property near room temperature as a replacement material, influence on the thermoelectric property of the microstructure in Mg2Sn thin film is discussed. In this study, the amorphous substrate is subjected to Mg2Sn thin film growth after formed the Ag thin film on for the purpose of Ag addition to Mg2Sn thin film, to investigate the microstructure of the thin film and the thermoelectric properties.