The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

9 Applied Materials Science » 9.5 New functional materials and new phenomena

[13p-2R-1~11] 9.5 New functional materials and new phenomena

Sun. Sep 13, 2015 1:45 PM - 4:45 PM 2R (231-2)

座長:高瀬 浩一(日大),原 嘉昭(茨城高専)

3:15 PM - 3:30 PM

[13p-2R-6] Temperature dependence of polarized Raman scattering spectra of TlInS2

〇(DC)RAUL PAUCAR1, YongGu Shim2, Kazuki Wakita1, Oktay Alekperov3, Nazim Mamedov3 (1.Chiba Inst. of Tech., 2.Osaka Pref. Univ., 3.Azerbaijan Inst. of Phys.)

Keywords:Ternary thallium chalcogenide,Raman scattering,Phase transition

TlInS2 belongs to the group of ternary thallium dichalcogenides compounds with chemical formula TlMeX2 (where Me = In or Ga, X = Se, S, or Te). They have both layered (TlInS2, TlGaS2, TlGaSe2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. These compounds attract particular interest due to high degree of anisotropy in their physical properties and potential applications in optoelectronics as well. In this work, the polarized Raman spectra of layered TlInS2 crystals are reported. The optical phonons which shows strong temperature dependence are identified as interlayer vibrations and are related to the phase transition, while the phonons which show a weak temperature dependence are identified as intralayer vibrations. Furthermore, we present a preliminary assignment of the symmetry modes.