The 76th JSAP Autumn Meeting, 2015

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Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[13p-2W-1~16] 15.5 Group IV crystals and alloys

Sun. Sep 13, 2015 1:15 PM - 5:30 PM 2W (234-2(North))

座長:黒澤 昌志(名大),都甲 薫(筑波大)

1:15 PM - 1:30 PM

[13p-2W-1] Effect of Ge growth temperature and growth rate on Ge dots formation using surface reconstruction through Si-C binding

〇Yuhki Satoh1, Yuhki Itoh1, Tomoyuki Kawashima1, Katsuyoshi Washio1 (1.Tohoku Univ.)

Keywords:quantum dots,Ge,C