The 76th JSAP Autumn Meeting, 2015

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[13p-2W-1~16] 15.5 Group IV crystals and alloys

Sun. Sep 13, 2015 1:15 PM - 5:30 PM 2W (234-2(North))

座長:黒澤 昌志(名大),都甲 薫(筑波大)

2:00 PM - 2:15 PM

[13p-2W-4] Effects of ion implantation on strain relaxation of SiGe films on Si(110) substrates

〇Madoka Kato1, Taiyo Murakami2, Keisuke Arimoto2, Junji Yamanaka2, Kiyokazu Nakagawa2, Kentaro Sawano1 (1.Tokyo City Univ., 2.Univ. of Yamanashi)

Keywords:SiGe on Si(110)