[13p-2W-1~16] 15.5 Group IV crystals and alloys

[13p-2W-7] Improving Crystallinity of Ge layers on Si by Optimizing the Growth Temperature

〇Katsuya Oda¹, Tadashi Okumura¹, Satoshi Kako², Satoshi Iwamoto², Yasuhiko Arakawa² (1.Hitachi R&D, 2.Univ. of Tokyo)

Keywords:Germanium,Crystallinity,Photoluminescence

Crystallinity and optical properties of Ge layers grown on Si substrate were investigated, and crystallinity was improved by optimizing the growth temperature.