[13p-4C-1~9] What is the last knob of Ge-CMOS?

[13p-4C-7] Carrier Activation Enhancement and Ultra-low Contact Resistance for Ge CMOS

〇Hidenori Miyoshi¹, Tetsuji Ueno¹, Koji Akiyama¹, Yoshihiro Hirota¹, Takanobu Kaitsuka¹ (1.Tokyo Electron Ltd.)

Keywords:germanium,carrier concentration,contact resistance