[13p-4E-1~20] 6.5 Surface Physics, Vacuum

[13p-4E-4] Ambient-pressure XPS Study of Origin of Positive Charging of Water-adsorbed GeO₂/Ge

〇Kenta Arima¹, Daichi Mori¹, Hiroshi Oka¹, Takuji Hosoi¹, Kentaro Kawai¹, Zhi Liu², Heiji Watanabe¹, Mizuho Morita¹ (1.Osaka Univ., 2.Berkeley Lab.)

Keywords:oxide film,charging,water vapor

Charging states of thin GeO₂ films on Ge, as well as those of SiO₂ on Si, are investigated in the presence of water vapor by ambient-pressure XPS. Obtained Ge3d and Si2p spectra are compared with those taken in ultrahigh vacuum. These spectra probably indicate that, in contrast to SiO₂, GeO₂ films are positively charged by exposure to water vapor, which is irrelevant to X-ray irradiation.