Investigation of electrical characteristics of directly-bonded InP/Si substrate interface

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

Sun. Sep 13, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

1:30 PM - 3:30 PM

〇(M2)Junya Kishikawa¹, Keiichi Matsumoto¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:MOVPE,InP/Si substrate,Wafer Direct Bonding