Temperature dependence of the surface segregation of Er atoms during MBE growth of GaAs

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals

Sun. Sep 13, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

1:30 PM - 3:30 PM

〇riguo jin¹, Kengo Takamiya¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (1.saitama Univ.)

Keywords:Erbium,MBE,surface segregation