[13p-PB6-1~20] 21.1 Joint Session K

[13p-PB6-3] Surface relaxation structure of α-Ga₂O₃ films grown on α-Al₂O₃ substrates by mist CVD

〇Shun Osaka¹, Daiki Tamba¹, Kazuki Takahashi¹, Masaya Oda^2,3, Kentaro Kaneko², Hiroshi Tabata¹, Osamu Kubo¹, Shizuo Fujita², Mitsuhiro Katayama¹ (1.Osaka Univ.,, 2.Kyoto Univ.,, 3.FLOSFIA INC.)

Keywords:Ga2O3,CAICISS,surface structure