The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-1D-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 14, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:竹内 哲也(名城大),中野 貴之(静岡大)

11:30 AM - 11:45 AM

△ [14a-1D-11] Carrier gas dependence of GaSb molar fraction in GaNSb

〇(M2)Daisuke Komori1, Kaku Takarabe1, Kenta Suzuki1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki iwaya1, Takao Miyajima1, Norikatu Koide1, Isamu Akasaki1,2 (1.Meijo Univ., 2.ARC, Nagoya Univ.)

Keywords:semiconductor,crystal growth,Sb