[14a-1D-1~11] 15.4 III-V-group nitride crystals

[14a-1D-2] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (II): In_xGa_1-xN(x~0.3) growth

〇Akio Yamamoto^1,2, Kazuki Kodama^1,2, Naoteru Shigekawa³, Takashi Matsuoka⁴, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ., 4.Tohoku Univ)

Keywords:InGaN,MOVPE,ammonia decomposition catalyst

The MOVPE growth of InGaN using a pellet-type NH₃ decomposition catalyst has been investigated. By using this method, a single-crystalline wurtzite InGaN is grown at a temperature less than 500 deg. C. A possibility that C contamination level in InGaN grown by this method is markedly reduced is also found.