10:30 AM - 10:45 AM
[14a-1D-7] InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD
Keywords:InGaN/GaN MQW,200 mm Si wafer,MOCVD
Effect of growth parameters on InGaN/GaN MQW period and average [In] grown on 200 mm Si wafer was investigated using single-wafer fast rotation MOCVD tool. Precise control of MQW period and average [In] can be achieved by tuning these parameters.