[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

△ [14a-2B-1] Observation of spin relaxation in Si doped GaAs grown by VGF method

〇shunsuke ohki¹, Masaki Asakawa¹, Tomoki Ishikawa¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

Keywords:spin relaxation,Si doped GaAs,pump and probe measurements

In this research, we investigated the spin relaxation in Si doped GaAs by the VGF method by time-resolved spin-dependent pump and probe reflectance measurements. As a result, the spin relaxation time was 246 ps in 10 K, and negative temperature dependence of the spin relaxation time was observed between 10 and 150 K. Because this result is different from the result of the undoped GaAs by the VGF method which we reported before, I think this research has the important meaning that can contribute to elucidation of the spin relaxation mechanism.