[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

[14a-2B-10] Photoluminescence from Eu³⁺ ions doped in ZnO:Ga and ZnGa₂O₄ films

〇Housei Akazawa¹, Hiroyuki Shinojima² (1.NTT DIC, 2.Kurume NCT)

Keywords:ZnO:Eu,ZnO:Ga, Eu,ZnGa2O4:Eu

Photoluminescence from Eu³⁺ ions that are doped in ZnO crystalline films can scarcely be observed because of the different charge state and ionic radii of Eu³⁺ and Zn²⁺ ions. We investigated photoluminescence by changing the host film from ZnO to Ga-doped ZnO (GZO) and ZnGa₂O₄. We found that co-doping with Ga³⁺ hinders emissions from Eu³⁺ ions probably due to the competition in occupying sites that can accept 3+ chaged ions. In constrast, emissions from Eu³⁺ ions could be observed from ZnGa₂O₄ for a wide parameter range since Ga³⁺ ions are major components of ZnGa₂O₄ crystal lattice, which thus can be substituted with Eu³⁺ ions.