[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

[14a-2B-4] Enhancement of emission efficiency of P-doped Si-nc using step excitation: Time sharing between photon emission and electric conduction

〇Masashi Ishii¹, Iain Crowe², Matthew Halsall², Andrew Knights³, Russell Gwilliam⁴, Bruce Hamilton² (1.NIMS, 2.Univ. Manchester, 3.McMaster Univ., 4.Univ. Surrey)

Keywords:Si nano-crystal,Auger,Emission efficiency

We discussed a technique to enhance emission efficiency of Si-nc:P using avoidance of Auger process. The technique uses a fact that the rate of Auger emission is much higher than that of propagation to neighboring Si-nc’s. The efficiency increased after the light “on”, decreased after a peak, and stabilized at a steady state. The pulse width was limited by shutter speed of the irradiation.