[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [14a-2J-2] Voltage-induced magnetic anisotropy change in FePt|MgO tunnel junctions investigated by x-ray magnetic circular dichroism spectroscopy

〇Shinji Miwa¹, Kensho Matsuda¹, Motohiro Suzuki², Kazuhito Tanaka¹, Takayuki Nozaki³, Shinji Yuasa³, Yoshishige Suzuki^1,3 (1.Osaka Univ., 2.JASRI/SPring-8, 3.AIST)

Keywords:Voltage induced magnetic anisotropy change,X-ray magnetic circular dichroism spectroscopy

Magnetic anisotropy in ferromagnetic thin-film-metals can be controlled by an external voltage. This voltage effect has attracted much attention as the ultimate technology for low-power operation of spintronic devices. However, further investigation is indispensable since the effect is too small for applications. In this regards, it is important to clarify its mechanism but no experimental evidence to prove the mechanism has been reported so far. In the present study, we have investigated the voltage controlled magnetic anisotropy in FePt by x-ray magnetic circular dichroism (XMCD) spectroscopy.