The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[14a-2J-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2J (223)

座長:谷口 知大(産総研)

11:00 AM - 11:15 AM

[14a-2J-8] In-plane aspect ratio dependence of thermal stability and intrinsic critical current
in CoFeB/MgO magnetic tunnel junctions with perpendicular anisotropy

〇Eriko Hirayama1, Shun Kanai1,2, Hideo Sato2,3, Fumihiro Matsukura1,2,4, Hideo Ohno1,2,3,4 (1.LNS-RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

Keywords:magnetic tunnel junction

To investigate the influence of the anisotropy on the properties of magnetic tunnel junctions (MTJs), we fabricate elliptical MTJs with a perpendicular magnetic easy axis with various in-plane aspect ratios (ARs), and evaluate their thermal stability factor and intrinsic critical current for magnetization switching. The in-plane magnetic-field angle dependence of the junction resistance shows that the in-plane anisotropy field increases with increasing AR, and its value is consistent with that expected from the shape-dependent demagnetizing factors. Thermal stability factor and intrinsic critical current do not show clear dependence of AR in agreement with magnetization switching through the nucleation of domains.