2015年 第76回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.3 GMR・TMR・磁気記録技術

[14a-2J-1~12] 10.3 GMR・TMR・磁気記録技術

2015年9月14日(月) 09:00 〜 12:15 2J (223)

座長:谷口 知大(産総研)

11:00 〜 11:15

[14a-2J-8] In-plane aspect ratio dependence of thermal stability and intrinsic critical current
in CoFeB/MgO magnetic tunnel junctions with perpendicular anisotropy

〇Eriko Hirayama1, Shun Kanai1,2, Hideo Sato2,3, Fumihiro Matsukura1,2,4, Hideo Ohno1,2,3,4 (1.LNS-RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

キーワード:magnetic tunnel junction

To investigate the influence of the anisotropy on the properties of magnetic tunnel junctions (MTJs), we fabricate elliptical MTJs with a perpendicular magnetic easy axis with various in-plane aspect ratios (ARs), and evaluate their thermal stability factor and intrinsic critical current for magnetization switching. The in-plane magnetic-field angle dependence of the junction resistance shows that the in-plane anisotropy field increases with increasing AR, and its value is consistent with that expected from the shape-dependent demagnetizing factors. Thermal stability factor and intrinsic critical current do not show clear dependence of AR in agreement with magnetization switching through the nucleation of domains.