[14a-2S-1~12] 3.9 Terahertz technologies

[14a-2S-1] The influence of hole distribution on interference
between LO phonon and inter valence band transition

〇Hironori Sakamoto¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (1.Chiba Univ)

Keywords:quantum interference,GaInP,Raman spectroscopy

The quantum interference between 2 LO phonon (discrete states) and inter valence band transition (continuum) is arisen on p-GaInP. In Raman spectra, asymmetric line shape and LO peak shift characterize quantum interference effect. It was found that the inverse of asymmetry and the direction of energy shift depend on carrier thermal distribution.