The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.1 Growth technology

[14a-2T-1~12] 17.1 Growth technology

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2T (232)

座長:佐藤 信太郎(富士通研)

9:00 AM - 9:15 AM

[14a-2T-1] Study on Morphological Changes of Large-Area Monolayer Graphene Oxide Films during Methane-Assisted Thermal Reduction

〇(M2)MuhammadZikri BinDzukarnain1, Hibiki Imai1, Toshiyuki Takami1, Toshio Ogino1,2 (1.Yokohama Nat. Univ., 2.CREST/JST)

Keywords:Graphene oxide,Thermal annealing (reduction),Electrical conductivity

By optimizing graphene's unique mechanical, optical and one-atom thickness properties, it exhibits potential application in the area of transparent, flexible electrodes and thin-film devices. Among all graphene fabrication methods, reduction of graphene oxide (GO) is expected as the new potential approach to cost-effivetively produce large-area graphene films for mass production. In this study, by comparing the reduction of large-area monolayer GO films in methane with typical thermal annealing method in only argon atmosphere, we have investigated the morphological changes GO flakes/sheets and its effect on the restoration of GO film conductivity.