[14a-2T-1~12] 17.1 Growth technology

[14a-2T-10] New interface structures formed by SiC surface thermal decomposition in Ar atmosphere with C₂H₄ gas

〇Takashi Kajiwara¹, Shingo Hayashi¹, Anton Visikovskiy¹, Takushi Iimori², Fumio Komori², Satoru Tanaka¹ (1.Kyushu Univ., 2.Univ. of Tokyo)

Keywords:Graphene,SiC,interface structure

We performed graphene growth by SiC thermal decomposition in Ar atmosphere with C2H4 gas. The buffer layer was grown at relatively low temperatures (~1400 °C). With further annealing the buffer layer was transformed into graphene by C₂H₄ intercalation, resulting in the new interface structure.