[14a-2T-1~12] 17.1 Growth technology

[14a-2T-6] Fabrication of ultrahigh-quality graphene on SiC(000\overline{1}) substrate and evaluation of Bernal-stacked domain

〇Keiichiro Tashima¹, Ryota Suto¹, Hirokazu Fukidome¹, Suemitsu Maki¹, Koji Horiba², Hiroshi Kumigashira², Masato Kotsugi³, Takuo Ohkochi³ (1.RIEC,Tohoku Univ., 2.KEK, 3.SPring-8 JASRI)

Keywords:graphene,SiC