[14a-2U-1~12] 17.1 Growth technology

[14a-2U-2] In situ NEXAFS measurements for CNT growth by thermal decomposition of SiC

〇Takahiro Maruyama¹, Shigeya Naritsuka¹, Kenta Amemiya² (1.Meijo Univ., 2.KEK PF)

Keywords:carbon nanotube,NEXAFS,SiC

We carried out in situ NEXAFS measurements for carbon nanotube (CNT) growth by thermal decomposition of SiC. At the beginning, graphene fragments parallel to the SiC surface were observed, then, as desorption of Si atoms proceeded, CNTs grew perpendicular to the SiC surface. Our results were consistent with recent DFTB/MD simulations.