9:15 AM - 9:30 AM
[14a-4C-2] Improvement Effect of Hf-Post Metallization Annealing on GeO2/Ge Interface Characteristics
Keywords:germanium,hafnium,PMA
Oral presentation
13 Semiconductors » 13.3 Insulator technology
Mon. Sep 14, 2015 9:00 AM - 11:45 AM 4C (432)
座長:渡部 平司(阪大),井上 真雄(ルネサス)
9:15 AM - 9:30 AM
Keywords:germanium,hafnium,PMA