The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.3 Insulator technology

[14a-4C-1~10] 13.3 Insulator technology

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 4C (432)

座長:渡部 平司(阪大),井上 真雄(ルネサス)

9:15 AM - 9:30 AM

[14a-4C-2] Improvement Effect of Hf-Post Metallization Annealing on GeO2/Ge Interface Characteristics

〇Jumpei Niida1, Yoshitaka Iwazaki1, Tomo Ueno1 (1.Tokyo Univ. of Agri. & Tech.)

Keywords:germanium,hafnium,PMA