The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.3 Insulator technology

[14a-4C-1~10] 13.3 Insulator technology

Mon. Sep 14, 2015 9:00 AM - 11:45 AM 4C (432)

座長:渡部 平司(阪大),井上 真雄(ルネサス)

9:30 AM - 9:45 AM

[14a-4C-3] Low-temperature formation of GeO2/ Ge interface by using atomic layer deposition method and its electrical characteristics

〇(M2)Masayuki Kanematsu1, Shigehisa Shibayama1,2, Mitsuo Sakashita1, Wakana Takeuchi1, Osamu Nakatsuka1, Shigeaki Zaima1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.EcoTopia Sci. Inst., Nagoya Univ.)

Keywords:ALD