[14a-PB4-1~3] 13.5 Semiconductor devices and related technologies

[14a-PB4-3] 0-25 GHz 65 nm CMOS Differential Double Pole Four Throw Switching Matrix

〇Kazuki Shinya¹, Mitudenn Wang¹, Azhari Afreen¹, Takamaro Kikkawa¹ (1.hiroshima Univ)

Keywords:semiconductor,Complementary Metai Oxcide Semiconductor,Switching

The purpose of this study is the development of differential switching matrix to control the dipole antenna array of UWB radar for the detection of breast cancer.0-25 GHz CMOS Differential Double Pole Four Throw Switching Matrix designed in 65 nm CMOS.Chip size is 1.30 mm X 2.54 mm (pad included).The simulated to calculate the insertion loss and isolation.