[14a-PB6-1~7] 15.5 Group IV crystals and alloys

[14a-PB6-1] Depth characterization of chemical states in GeSn thin film by HAXPES

〇Koji Usuda¹, Takaishi Riichiro¹, Yoshiki Masahiko¹, Suda Kohei², Ogura Atsushi², Tomita Mitsuhiro¹ (1.Toshiba Corp., 2.Meiji Univ.)

Keywords:GeSn,HAXPES,Synchrotron Radiation

GeSn thin-film is attractive for high-mobility channel, strain stressor, or optical application. However, solubility limit of Sn within a GeSn is considered to be as low as 1 atomic % order, and new GeSn growth method and evaluation method are required to realize a high quality GeSn. We adopted the hard X-ray photoelectron spectroscopy to characterize the chemical-shift of the GeSn films.