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[14a-PB6-3] Poly-crystallization of electrodeposited Ge film by Cu-induced crystallization II -Deposition condition dependence-
Keywords:germanium,electro-deposition
We have investigated electro plating current dependence of Cu induced crystallized electrodeposited-Ge-films. All samples film thickness was controlled by the deposition time to be the same 120nm. Although XRD peak intensities were different in 60 and 80mA sample, the observed XRD peaks were the same and observed peaks were (221) and (220). The observed XRD peaks from the sample deposited at 100mA were weak but different from others. The observed main peaks were (222) and (111) respectively.
From the EBSD measurement, the average grain sizes of electrodeposited films at the deposition current of 60 and 100mA were about 50 and 60nm, respectively. The grain size distribution in the film electrodeposited by plating current of 100mA distributed uniformly to a maximum of 140nm. The distribution of grain size in the film electrodeposited by the plating current of 80mA was different from that of 100mA. The distribution of grain size which was electrodeposited at 80mA was not uniform and some characteristic sizes were observed. Because in our equipment the growth rate of the film saturated with more than 80 mA, it is considered to have grown containing with high density nucleation site at the 100mA electro plating current.
From the EBSD measurement, the average grain sizes of electrodeposited films at the deposition current of 60 and 100mA were about 50 and 60nm, respectively. The grain size distribution in the film electrodeposited by plating current of 100mA distributed uniformly to a maximum of 140nm. The distribution of grain size in the film electrodeposited by the plating current of 80mA was different from that of 100mA. The distribution of grain size which was electrodeposited at 80mA was not uniform and some characteristic sizes were observed. Because in our equipment the growth rate of the film saturated with more than 80 mA, it is considered to have grown containing with high density nucleation site at the 100mA electro plating current.