The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /MEMS/Integration technology

[14p-1C-1~16] 13.4 Si wafer processing /MEMS/Integration technology

Mon. Sep 14, 2015 1:15 PM - 5:30 PM 1C (135)

座長:中村 友二(富士通研),筑根 敦弘(大陽日酸)

4:45 PM - 5:00 PM

[14p-1C-14] In-Situ Observation of thermal behavior in CVD reactor

〇kento miyazaki1, Ayumi Saito1, Misako Matsui1, Hitoshi Habuka1 (1.Yokohama Nat. Univ)

Keywords:In situ monitor,Langasite crystal microbalance,Thermal condition

The langasite crystal microbalance (LCM) has been used for in-situ obtaining the frequency change due to the weight increase caused by the film deposition, and due to the ambient gas properties. In this study, the method for evaluating the temperature change during the film deposition was developed, taking into account the behaviors of reaction heat by filn deposition and the heat capacity of ambient gas.