[14p-1C-1~16] 13.4 Si wafer processing /MEMS/Integration technology

[14p-1C-16] Development of silicon film growth at high rate in SiHCl₃-SiH_x-H₂ system

〇Ayumi Saito¹, Ayumi Sakurai¹, Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:Silicomepitaxy,Growth rate,Reaction mechanism

In order to exceed the silicon epitaxial growth rate saturation caused by the Langmuir–type surface reaction mechanism, we designed a new surface process utilizing an addition of SiH_x gas to SiHCl₃ gas. The new process could be verified based on the epitaxial growth rate increase with the increasing SiH_x gas flow rate. Its detail will be discussed.