13:45 〜 14:15
▲ [14p-2D-1] [JSAP-OSA Joint Symposia 2015 Invited Talk] Semiconductor Membrane Lasers toward On-chip Optical Interconnects
キーワード：semiconductor laser,membrane laser,optical interconnect
The optical interconnect is advantageous when the clock speed in the LSI becomes faster and faster since it is immune from the RC time delay and the power consumption in electrical wiring. Recently optical interconnections have been introduced in modern supercomputers because of their high-speed signal transmission capability with low-power-consumption. In order to introduce optical interconnects into the LSI chip level, optical links with extremely low-power-consumption operation are required.
As a candidate to realize such optical interconnects, we proposed an optical link based on membrane photonic devices. Since this membrane structure can strongly confine the optical field into the active region, which leads to an enhancement of a modal gain as well as an index-coupling coefficient in a distributed feedback (DFB) laser, an extremely low threshold current operation can be expected by shortening the cavity length. A theoretical investigation of such optical link revealed that an energy cost of less than 50 fJ/bit could be possible for 10 Gbps transmission.
In this symposium, we will report recent results obtained with GaInAsP/InP membrane DFB and DR lasers. Very low-threshold-current operation was achieved with both types of membrane lasers.
As a candidate to realize such optical interconnects, we proposed an optical link based on membrane photonic devices. Since this membrane structure can strongly confine the optical field into the active region, which leads to an enhancement of a modal gain as well as an index-coupling coefficient in a distributed feedback (DFB) laser, an extremely low threshold current operation can be expected by shortening the cavity length. A theoretical investigation of such optical link revealed that an energy cost of less than 50 fJ/bit could be possible for 10 Gbps transmission.
In this symposium, we will report recent results obtained with GaInAsP/InP membrane DFB and DR lasers. Very low-threshold-current operation was achieved with both types of membrane lasers.