[14p-2D-1~19] 4.4 Opto-electronics

▲ [14p-2D-8] Characterizations of the Hybrid Si/GaN Microring Resonator with Asymmetric Vertical Coupling

〇(DC)Borriboon Thubthimthong¹, Takashi Sasaki¹, Kazuhiro Hane¹ (1.Tohoku Univ.)

キーワード：Microring resonators,GaN,Hybrid Si/III-V nanophotonics

We investigated a hybrid Si/GaN microring (MR) resonator consisting of a flowable oxide-clad GaN MR vertically and asymmetrically coupled to a Si channel waveguide. Despite many previous works on hybrid silicon nanophotonics, the hybrid nanophotonics of Si and GaN has been investigated only by our group recently. In this work, the spectral characterizations of the structure were performed for telecommunication windows covering C- and L-bands. By using wavelength scanning method, we obtained the typical microring resonator characteristics in which up to 17-dB extinction ratio and 40-pm linewidth were obtained at resonant wavelengths. The quality factor of up to 70,000 was estimated. The characterization results together with the fabrication techniques of such the hybrid Si/GaN structures seem promising not only for on-chip optical interconnect applications but also for studying various optical phenomena between Si and GaN.