[14p-2J-5~18] 10.2 Spin torque, spin current, circuits, and measurement technologies

▲ [14p-2J-17] Investigation of gate-voltage dependence of spin accumulation signal in nondegenerate Si

〇Takayuki Tahara¹, Hayato Koike², Yuichiro Ando¹, Makoto Kameno³, Tomoyuki Sasaki², Yoshishige Suzuki³, Masashi Shiraishi^1,3 (1.Kyoto Univ., 2.TDK Corp., 3.Osaka Univ.)

Keywords:silicon spintronics,gate voltage dependence,spin transistor