[14p-2J-5~18] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [14p-2J-18] Spin injection into the topological crystalline insulator SnTe using spin pumping

〇Akiyori Yamamoto¹, Tomonari Yamaguchi², Ryo Ishikawa², Ryota Akiyama², Yuki K. Wakabayashi¹, Shinji Kuroda², Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo, 2.Univ. of Tsukuba)

Keywords:spin pumping,topological crystalline insulator,SnTe

We successfully demonstrated spin injection from the Fe layer and spin detection in the SnTe layer, which is a typical and promising TCI, and the topological SSs has been experimentally confirmed by the studies of angle-resolved photoemission spectroscopy and electrical transports.
Topological insulators (TIs) possess gapless metallic surface states (SSs) that are protected by the time-reversal symmetry (TRS). The SSs have attracted great attention for spintronics applications particularly because a giant spin Hall angle ( corresponds to the spin-to-charge current conversion efficiency) was reported in TI Bi₂Se₃. On the other hand, it was reported that since the SSs are protected by the TRS, the SSs are broken when a ferromagnetic material is deposited on the surface due to a magnetic perturbation. Meanwhile, topological crystalline insulators (TCIs), which have the gapless metallic SSs, also have received a lot of attention in recent years. Unlike TIs, the SSs in TCIs are protected by the mirror symmetry of the crystal. Thus, the SSs in TCIs are expected to be robust against the breaking of TRS due to the magnetic perturbation.