[14p-2J-5~18] 10.2 スピントルク・スピン流・回路・測定技術

▼ [14p-2J-7] Wire width dependence of current-induced domain wall motion properties

〇(M1)Toru Iwabuchi¹, Shunsuke Fukami^2,3, Hideo Ohno^1,2,3,4 (1.RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

キーワード：Spintronics,Current-induced domain wall motion

Wire width dependence of threshold current density for current-induced domain wall motion is investigated using Co/Ni wire with various widths down to less than 20 nm. The threshold current density shows a minimum at around 30 nm, below which it increases. To understand the origin of this result, we calculate the threshold current density by micromagnetic simulation. The simulation well reproduces the experimental result. Also, it suggests that low threshold current can be obtained for the wires with large anisotropy energy density even in the width of less than 20 nm.