[14p-2Q-1~16] 9.2 Nanowires and Nanoparticles

[14p-2Q-8] Bridging the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches through a self-assembly process

〇Guoqiang Zhang^1,2, Masato Takiguchi^1,2, Kouta Tateno^1,2, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

Keywords:semiconductor,nanowire,self-assembly

This work presents a method that bridges the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches for site-defined InP/InAs heterostructure NWs, which has long been a significant challenge for applications that require low-cost and high-throughput manufacturing processes.