[14p-2Q-1~16] 9.2 ナノワイヤ・ナノ粒子

[14p-2Q-8] 自己形成法を用いた、ナノメートル領域のボトムアップ法とマイクロメートル領域のトップダウン法との架橋技術の構築

〇章 国強^1,2、滝口 雅人^1,2、舘野 功太^1,2、後藤 秀樹¹ (1.NTT 物性研、2.NTT NPC)

キーワード：半導体、ナノワイヤ、自己組織化

This work presents a method that bridges the gap between the nanometer-scale bottom-up and micrometer-scale top-down approaches for site-defined InP/InAs heterostructure NWs, which has long been a significant challenge for applications that require low-cost and high-throughput manufacturing processes.