16:15 〜 16:30
▲ [14p-2Q-9] Boron Distribution in Individual Ge / Si Core-Shell Nanowires Investigated by Atom Probe Tomography
キーワード：Nanowires,Boron,Atom probe tomography
Ge / Si core-shell nanowires (NWs) showing substantial potentials in the application of biological detectors, solar cells as well as one-dimension field-effect transistor have attracted considerable attention in recent years due to its unique electronic properties caused by the one-dimensional quantum confinement effect. The dopant distributions in the Ge / Si core-shell NWs directly affect the performance of devices. Therefore, it is important to get clear of the dopant distribution in individual Ge / Si core-shell NWs.
Laser-assisted atom probe tomography (APT) has proved to be a powerful method to study semiconductor NWs in the atomic-scale resolution. In the previous report, we have introduced the method of using APT to study Ge / Si core-shell NWs. In this study, the Ge / Si core-shell NWs were investigated by APT to study the Boron distribution in this kind of NW. The core-shell structure was clearly observed in the atom map, and the dopant, B atoms, distributed in the Si shell.
Laser-assisted atom probe tomography (APT) has proved to be a powerful method to study semiconductor NWs in the atomic-scale resolution. In the previous report, we have introduced the method of using APT to study Ge / Si core-shell NWs. In this study, the Ge / Si core-shell NWs were investigated by APT to study the Boron distribution in this kind of NW. The core-shell structure was clearly observed in the atom map, and the dopant, B atoms, distributed in the Si shell.