[14p-2R-1~16] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[14p-2R-3] Phase transition behaviors in GeTe-CuTe pseudobinary alloy films

〇Yuji Sutou¹, Yuta Saito², Satoshi Shindo¹, Junichi Koike¹ (1.Tohoku Univ., 2.AIST)

Keywords:phase change random access memory,amorphous,crystallization

Phase change random access memory (PCRAM) has attracted much attention as one of the next-generation non-volatile memories because of its low production cost and high scalability. Our group has proposed a GeCu₂Te₃ compound (GCT) as a phase change material for PCRAM. In this study, the phase transition behaviors of GeTe-CuTe pseudobinary alloy films including stoichiometric GCT composition were investigated. As a result, we found that the density change upon phase transition from amorphous to crystalline states becomes small with increasing Cu content and the film with Cu content of 22-23at.% shows almost zero density change upon phase transition.